Abel GarcíaBarrientos was born in Tenancingo, Tlaxcala, Mexico, in 1979. He received the Licenciatura degree in Electronics from the Autonomous University of Puebla, Mexico, in 2000, and the M.Sc. and Ph.D. degree in Electronics from the National Institute for Astrophysics, Optics, and Electronics (INAOE), Tonantzintla, Puebla, in 2003 and 2006, respectively. Since 2007 he joined as a researcher at the Mechatronics Department at the Polytechnic University of Pachuca, Mexico. In 2009 he was a Post-Doctoral Fellow at the Micro- and Nano-Systems Laboratory at the McMaster University, Ontario, Canada. In 2010 Dr. Garcia-Barrientos was a Post-Doctoral Fellow at the Advanced Materials and Device Analysis group of Institute for Microelectronics, TechnischeUniversitat Wien, and in the summer 2013, he was a visiting professor at the Physics and Astronomy School at The University of Nottingham, UK. Since 2016, Dr. Gacia Barrientos is a full time professor level VI at the faculty of science at the Universidad Autonoma de San Luis Potosi. His scientific interests include device simulation, semiconductor device modeling, high-frequency electronics, and nanoelectronics. He has been member of SNI-Mexico since 2008 until 2022, level II. Dr. Garcia-Barrientos is a Fellow of the Mexican Academy of Science; the IEEE- Hidalgo subsection (Mexico) and he is member of the IEEE Communications Society.
Dr. Garcia-Barrientos is author and co-author of two books, 36 JCR Journal papers, 44 conferences papers and 6 chapters’ books. He has been general chair of the IEEE-Hidalgo subsection from 2014-2016 and, also He has been general chair of the network thematic “Fuentes de Energias Alternas” financed by PROMEP-SEP-Mexico from 2013-2015.